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| PD- 91849D IRF7233 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S 1 8 7 A D D D D S S G 2 VDSS = -12V 3 6 4 5 RDS(on) = 0.020 T op V ie w Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 9.5 6.0 76 2.5 1.6 0.02 60 12 -55 to + 150 Units V A W W/C mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 7/7/99 IRF7233 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -14 -12 --- --- --- -0.6 3.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -5.0mA --- --- V VGS = 0V, I D = -250A 0.001 --- V/C Reference to 25C, ID = -1mA 0.013 0.020 VGS = -4.5V, I D = -9.5A 0.023 0.033 VGS = -2.5V, I D = -6.0A --- --- V VDS = VGS, ID = -250A --- --- S VDS = -10V, ID = -9.5A --- -10 VDS = -12V, VGS = 0V --- -1.0 VDS = -9.6V, VGS = 0V A --- -100 VDS = -12V, VGS = 0V, TJ = 70C --- -100 nA VGS = -12V --- 100 VGS = 12V 49 74 ID = -9.5A 9.3 14 nC VDS = -10V 22 32 VGS = -5.0V 26 --- VDD = -10V 540 --- ID = -9.5A ns 77 --- RD = 1.0 370 --- RG = 6.2 4530 6000 VGS = 0V 2400 --- pF VDS = -10V 2220 --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 43 35 -2.5 A -76 -1.2 65 52 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t<10 sec Starting TJ = 25C, L = 1.3mH RG = 25, IAS = 9.5A. Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7233 100 VG S - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BO TTO M - 1.5V TOP 100 -I D , Drain-to-S ource C urrent (A ) 80 -ID , D ra in-to-S o urce C urre nt (A ) 20s PULSE W IDTH T J = 25C 6 8 10 80 VG S - 7 .5 V - 5 .0 V - 4 .0 V - 3 .5 V - 3 .0 V - 2 .5 V - 2 .0 V B O TT O M - 1 .5 V TO P 60 60 40 40 20 20 0 0 2 4 -1.5V A 0 0 2 4 -1 .5 V 20 s PU L SE W ID TH T J = 1 50C 6 8 10 A -V D S , D ra in-to-Source V oltage (V) -VD S , D rain-to-Sou rce V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 I D = -9.5A T J = 2 5 C TJ = 1 5 0 C R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , D ra in -to-S ou rc e C urre n t (A ) 1.5 10 1.0 0.5 1 1.0 1.5 2.0 V D S = -1 0 V 2 0 s P U L S E W ID TH 2.5 3.0 A 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VG S , G a te -to -S o u rc e V o lta ge (V ) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7233 6000 -VGS, Gate-to-Source Voltage (V) V G S = 0V, f = 1kHz C iss = Cg s + C g d , Cd s SH ORTE D C rss = C g d C o ss = C d s + C g d 10 ID = -9.5A VDS =-10V 8 C , C apac it ance (pF ) 5000 C iss 6 4000 4 3000 C o ss C rss 2000 0 2 4 6 8 10 12 2 A 0 0 10 20 30 40 50 60 70 -VD S , D rain-to-So urc e Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -I S D , Rev erse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) T J = 150C TJ = 25C -ID , Drain Current (A) I 100 10 100us 10 1ms 1 0.0 1.0 2.0 V G S = 0V A 3.0 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 -VS D , S ou rce-to-D ra in Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7233 10.0 140 EAS , Single Pulse Avalanche Energy (mJ) 120 100 80 60 40 20 0 25 50 75 100 8.0 ID -4.2A -7.6A BOTTOM -9.5A TOP -ID , Drain Current (A) 6.0 4.0 2.0 0.0 25 50 75 100 125 150 125 150 TC , Case Temperature ( C) Starting TJ , Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 1 0.1 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7233 SO-8 Package Details D -B - D IM 5 IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M AM 5 8 E -A - 7 A1 B C D E e e1 H K L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 -CB 8X 0 .25 (.01 0) A1 M CASBS 0 .10 (.00 4) L R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X Part Marking 6 www.irf.com IRF7233 Tape and Reel SO-8 T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 7/99 www.irf.com 7 |
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